smd type transistors 2SC4390 features adoption of mbit process. high dc current gain (h fe =800 to 3200). large current capacity (i c =2a). low collector-to-emitter saturation voltage (v ce(sat) 0.3v). high v ebo (v ebo 15v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 15 v collector current i c 2a collector current (pulse) i cp 4a base current i b 0.4 a collector dissipation p c 500 mw junction temperature t j 150 storage temperature t stg -55to+150 smd type transistors smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors ic transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 15v, i e =0 0.1 a emitter cutoff current i ebo v eb = 10v, i c =0 0.1 a dc current gain h fe v ce =2v , i c = 500ma 800 1500 3200 gain bandwidth product f t v ce = 10v , i c = 50ma 260 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 280 pf collector-emitter saturation voltage v ce(sat) i c =1a,i b = 20ma 0.11 0.5 v base-emitter saturation voltage v be(sat) i c =1a,i b = 20ma 0.87 1.2 v collector-base breakdown voltage v (br)cbo i c = 10a , i e =0 20 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 10 v emitter-base breakdown voltage v (br)ebo i e = 10a , i c =0 15 v turn-on time t on 0.13 s storage time t stg 0.8 s fall time t f 0.1 s smd type transistors 2SC4390 smd type transistors smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors ic transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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